Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1170 Datenblatt(PDF) 6 Page - Hitachi Semiconductor |
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2SK1170 Datenblatt(HTML) 6 Page - Hitachi Semiconductor |
6 / 9 page 2SK1169, 2SK1170 6 Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ µs, Ta = 25°C VGS = 0 Pulse Test Reverse Drain Current IDR (A) 5,000 2,000 500 200 100 50 1,000 0.5 1.0 2 5 10 20 50 Typical Capacitance vs. Drain to Source Voltage 100 010 20 30 40 50 Drain to Source Voltage VDS (V) Coss Ciss Crss 10 VGS = 0 f = 1 MHz 1,000 10,000 Dynamic Input Characteristics 500 400 300 200 100 0 40 80 120 160 200 Gate Charge Qg (nc) 20 16 12 8 4 0 VDD = 100 V V DD = 400 V 250 V 250 V VDS ID = 20 A 400 V VGS 100 V Switching Characteristics 500 100 50 20 10 5 200 0.5 1.0 2 5 10 20 50 Drain Current ID (A) VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% td (off) tr tf td (on) • • |
Ähnliche Teilenummer - 2SK1170 |
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Ähnliche Beschreibung - 2SK1170 |
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