Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1170 Datenblatt(PDF) 7 Page - Hitachi Semiconductor |
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2SK1170 Datenblatt(HTML) 7 Page - Hitachi Semiconductor |
7 / 9 page 2SK1169, 2SK1170 7 Reverse Drain Current vs. Source to Drain Voltage 20 16 12 8 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Pulse Test 5 V, 10 V VGS = 0, –10 V 3 1.0 0.1 0.03 0.01 0.3 10 µ 100 µ 1 m 10 m 100 m 1 10 Pulse Width PW (s) θch–c (t) = γ S (t) · θch–c θch–c = 1.04°C/W,T C = 25°C PDM PW T D = T PW Normalized Transient Thermal Impedance vs. Pulse Width TC = 25°C 0.01 0.05 0.02 0.2 0.1 0.5 1Shot Pulse D = 1 Vin Monitor Vout Monitor RL 50 Ω Vin = 10 V D.U.T . VDD = 30 V . Switching Time Test Circuit Vin 10 % 90 % 90 % 90 % 10 % td (on) td (off) tr tf Vout 10 % Wavewforms |
Ähnliche Teilenummer - 2SK1170 |
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Ähnliche Beschreibung - 2SK1170 |
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