Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1317 Datenblatt(PDF) 4 Page - Hitachi Semiconductor |
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2SK1317 Datenblatt(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page 2SK1317 4 50 820 Gate to Source Voltage VGS (V) 40 10 412 16 0 20 30 Drain to Source Saturation Voltage vs. Gate to Source Voltage 1 A ID = 3 A Pulse Test 0.5 A 2 A 50 0.5 10 Drain Current ID (A) 20 1.0 0.2 1.0 5 0.1 5 10 Static Drain to Source on State Resistance vs. Drain Current 2 0.5 2 15 V VGS = 10 V Pulse Test 20 40 160 Case Temperature TC (°C) 16 4 0 80 120 0 8 12 Static Drain to Source on State Resistance vs. Temperature ID = 2 A VGS = 15 V Pulse Test –40 0.5 A, 1 A 10 0.1 5 Drain Current ID (A) 5 0.5 0.05 0.2 1.0 0.1 1.0 2 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 0.2 0.5 2 75 °C –25 °C Ta = 25 °C |
Ähnliche Teilenummer - 2SK1317 |
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Ähnliche Beschreibung - 2SK1317 |
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