2SK1573 datasheet(5/9 Pages) HITACHI

Teilenummer	2SK1573

Bauteilbeschribung	Silicon N-Channel MOS FET

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Hersteller	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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5 / 9 page

2SK1573

5

10

410

Gate to Source Voltage VGS (V)

8

2

26

8

0

4

6

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

Pulse Test

ID = 20 A

10 A

5 A

5

100

Drain Current ID (A)

1

Static Drain to Source on State

Resistance vs. Drain Current

2

1

0.5

0.2

0.1

0.05

2

5

10

20

50

Pulse Test

VGS = 10, 15 V

2.0

40

160

Case Temperature TC (°C)

1.6

0.4

0

80

120

0

0.8

1.2

Static Drain to Source on State

Resistance vs. Temperature

–40

Pulse Test

VGS = 10 V

ID = 20 A

10 A

5 A

50

20

Forward Transfer Admittance

vs. Drain Current

0.2

20

10

5

2

1

0.5

Drain Current ID (A)

0.5

1

2

5

10

VDS = 10 V

Pulse Test

TC = –25°C

25°C

75°C

Ähnliche Beschreibung - 2SK1573

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	2SK1526	50Kb / 9P	Silicon N-Channel MOS FET
	2SK619	35Kb / 1P	SILICON N-CHANNEL MOS FET
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Panasonic Semiconductor	2SK1228	35Kb / 2P	Silicon N-Channel MOS FET
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Ähnliche Teilenummer - 2SK1573

Ähnliche Beschreibung - 2SK1573

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