Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1666 Datenblatt(PDF) 6 Page - Hitachi Semiconductor |
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2SK1666 Datenblatt(HTML) 6 Page - Hitachi Semiconductor |
6 / 9 page 2SK1666 6 di/dt = 50 A/ µs VGS = 0, Ta = 25°C 500 10 200 Reverse Drain Current IDR (A) 200 20 5 20 100 5 50 100 Body-Drain Diode Reverse Recovery Time 2 10 50 20 Drain to Source Voltage VDS (V) 10 40 30 50 1 10 100 1,000 0 Typical Capacitance vs. Drain to Source Voltage Crss Coss Ciss VGS = 0 f = 1 MHz Gate Charge Qg (nc) 0 40 200 80 160 120 0 4 8 12 16 20 Dynamic Input Characteristics VDS ID = 35 A 10 V 10 V 25 V 25 V VDD = 10 V VDD = 50 V 20 40 60 80 100 1,000 250 Drain Current ID (A) 500 15 20 10 100 50 200 0.5 20 10 Switching Characteristics tf td (on) tr VGS = 10 V, VDD 30 V PW = 2 µs, duty ≤ 1% td (off) = . . |
Ähnliche Teilenummer - 2SK1666 |
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Ähnliche Beschreibung - 2SK1666 |
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