2SK2059 datasheet(6/9 Pages) HITACHI

Teilenummer	2SK2059

Bauteilbeschribung	Silicon N-Channel MOS FET

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Hersteller	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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6 / 9 page

2SK2059(L), 2SK2059(S)

6

500

5

Reverse Drain Current IDR (A)

Body to Drain Diode Reverse

Recovery Time

0.05

200

100

50

20

10

5

0.1

0.2

0.5

1

2

di/dt = 100 A/

µs, V

GS = 0

Ta = 25°C, Pulse Test

1,000

20

50

Drain to Source Voltage VDS (V)

10

30

40

Typical Capacitance vs.

Drain to Source Voltage

0

100

10

1

VGS = 0

f = 1 MHz

Crss

Coss

Ciss

500

820

Gate Charge Qg (nc)

Dynamic Input Characteristics

400

100

412

16

0

200

300

20

16

4

0

8

12

VDD = 100 V

250 V

400 V

VGS

VDS

ID = 2 A

VDD = 400 V

250 V

100 V

500

5

Drain Current ID (A)

0.05

Switching Characteristics

200

100

50

20

10

5

0.1

0.5

1

0.2

2

VGS = 10 V, VDD

30 V

PW = 2

µs, duty 1%

=

.

tf

td (on)

tr

td (off)

<

=

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2SK2059 Datenblatt(PDF) 6 Page - Hitachi Semiconductor

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