Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK2059 Datenblatt(PDF) 6 Page - Hitachi Semiconductor |
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2SK2059 Datenblatt(HTML) 6 Page - Hitachi Semiconductor |
6 / 9 page 2SK2059(L), 2SK2059(S) 6 500 5 Reverse Drain Current IDR (A) Body to Drain Diode Reverse Recovery Time 0.05 200 100 50 20 10 5 0.1 0.2 0.5 1 2 di/dt = 100 A/ µs, V GS = 0 Ta = 25°C, Pulse Test 1,000 20 50 Drain to Source Voltage VDS (V) 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 100 10 1 VGS = 0 f = 1 MHz Crss Coss Ciss 500 820 Gate Charge Qg (nc) Dynamic Input Characteristics 400 100 412 16 0 200 300 20 16 4 0 8 12 VDD = 100 V 250 V 400 V VGS VDS ID = 2 A VDD = 400 V 250 V 100 V 500 5 Drain Current ID (A) 0.05 Switching Characteristics 200 100 50 20 10 5 0.1 0.5 1 0.2 2 VGS = 10 V, VDD 30 V PW = 2 µs, duty 1% = . . tf td (on) tr td (off) < = |
Ähnliche Teilenummer - 2SK2059 |
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Ähnliche Beschreibung - 2SK2059 |
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