Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK2225 Datenblatt(PDF) 3 Page - Hitachi Semiconductor |
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2SK2225 Datenblatt(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SK2225 3 80 60 40 20 0 50 100 150 200 Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area 10 3 1 0.3 0.1 0.03 0.01 10 30 100 300 1000 3000 10000 1 ms Operation in this area is limited by R DS(on) Ta = 25 °C 10 µs PW = 10 ms (1shot) 5 4 3 2 1 0 20 40 60 80 100 Drain to Source Voltage V (V) DS Typical Output Characteristics 15 V 10 V 7 V 6 V 5 V Pulse Test V = 4 V GS 8 V 2.0 1.6 1.2 0.8 0.4 0 Gate to Source Voltage V (V) GS Typical Transfer Characteristics Tc = 75 °C 25 °C –25 °C V = 25 V Pulse Test DS 246 8 10 |
Ähnliche Teilenummer - 2SK2225 |
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Ähnliche Beschreibung - 2SK2225 |
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