Datenblatt-Suchmaschine für elektronische Bauteile |
|
2SK2529 Datenblatt(PDF) 3 Page - Hitachi Semiconductor |
|
2SK2529 Datenblatt(HTML) 3 Page - Hitachi Semiconductor |
3 / 10 page 2SK2529 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 60 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS —— 10 µAV DS = 60 V, VGS = 0 Gate to source cutoff voltage V GS(off) 1.0 — 2.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance R DS(on) — 7 10 m Ω I D = 25 A V GS = 10 V* 1 —1016 m Ω I D = 25 A V GS = 4 V* 1 Forward transfer admittance |y fs|35 55 — S I D = 25 A V DS = 10 V* 1 Input capacitance Ciss — 3550 — pF V DS = 10 V Output capacitance Coss — 1760 — pF V GS = 0 Reverse transfer capacitance Crss — 500 — pF f = 1 MHz Turn-on delay time t d(on) — 35 — ns I D = 25 A Rise time t r — 230 — ns V GS = 10 V Turn-off delay time t d(off) — 470 — ns R L = 1.2 Ω Fall time t f — 360 — ns Body to drain diode forward voltage V DF — 0.85 — V I F = 50 A, VGS = 0 Body to drain diode reverse recovery time t rr — 135 — ns I F = 50 A, VGS = 0 di F / dt = 50 A / µs Note 1. Pulse Test |
Ähnliche Teilenummer - 2SK2529 |
|
Ähnliche Beschreibung - 2SK2529 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |