Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK2568 Datenblatt(PDF) 3 Page - Hitachi Semiconductor |
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2SK2568 Datenblatt(HTML) 3 Page - Hitachi Semiconductor |
3 / 6 page 2SK2568 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 500 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µAV DS = 400 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance R DS(on) — 0.5 0.6 Ω I D = 6 A V GS = 10 V* 1 Forward transfer admittance |y fs| 6.0 10 — S I D = 6 A V DS = 10 V* 1 Input capacitance Ciss — 1560 — pF V DS = 10 V Output capacitance Coss — 450 — pF V GS = 0 Reverse transfer capacitance Crss — 72 — pF f = 1 MHz Turn-on delay time t d(on) — 22 — ns I D = 6 A Rise time t r — 78 — ns V GS = 10 V Turn-off delay time t d(off) — 140 — ns R L = 5 Ω Fall time t f —60—ns Body to drain diode forward voltage V DF — 1.1 — V I F = 12 A, VGS = 0 Body to drain diode reverse recovery time t rr — 105 — ns I F = 12 A, VGS = 0 diF / dt = 100 A / µs Note: 1. Pulse Test |
Ähnliche Teilenummer - 2SK2568 |
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Ähnliche Beschreibung - 2SK2568 |
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