2SK2684S datasheet(7/10 Pages) HITACHI

Teilenummer	2SK2684S

Bauteilbeschribung	Silicon N Channel DV-L MOS FET High Speed Power Switching

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Hersteller	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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7 / 10 page

2SK2684(L), 2SK2684(S)

7

50

40

30

20

10

0

0.4

0.8

1.2

1.6

2.0

V

= 0, –5 V

GS

10 V

5 V

3

1

0.3

0.1

0.03

0.01

10

µ

100

µ

1 m

10 m

100 m

1

10

DM

P

PW

T

D =

PW

T

ch – c(t) = s (t) •

ch – c

ch – c = 2.5

°C/W, Tc = 25 °C

θ

γ

θ

Tc = 25

°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

pulse

Source to Drain Voltage

V

(V)

SD

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Width

PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

Pulse Test

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2SK2684S Datenblatt(PDF) 7 Page - Hitachi Semiconductor

2SK2684S Datenblatt(HTML) 7 Page - Hitachi Semiconductor

Ähnliche Teilenummer - 2SK2684S

Ähnliche Beschreibung - 2SK2684S

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