2SK2885 datasheet(4/7 Pages) HITACHI

Teilenummer	2SK2885

Bauteilbeschribung	Silicon N Channel MOS FET High Speed Power Switching

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Hersteller	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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4 / 7 page

2SK2885(L), 2SK2885(S)

4

Main Characteristics

100

75

50

25

0

50

100

150

200

0.1

0.3

1

3

10

30

100

Case Temperature

Tc (

°C)

Power vs. Temperature Derating

Drain to Source Voltage

V

(V)

DS

Maximum Safe Operation Area

1000

300

100

30

10

1

0.3

0.1

3

Ta = 25

°C

1 shot pulse

10

µs

100

µs

1 ms

PW

=

10

ms

DC

Operation

(Tc

=

25

°C)

Operation in

this area is

limited by R DS(on)

Pulse Width

PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

0.3

0.1

0.03

0.01

10

µ

100

µ

1 m

10 m

100 m

1

10

DM

P

PW

T

D =

PW

T

ch – c(t) = s (t) •

ch – c

ch – c = 1.67

°C/W, Tc = 25 °C

θ

γ

θ

Tc = 25

°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

pulse

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