Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK3081 Datenblatt(PDF) 1 Page - Hitachi Semiconductor |
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2SK3081 Datenblatt(HTML) 1 Page - Hitachi Semiconductor |
1 / 9 page 2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB 1 2 3 1. Gate 2. Drain(Flange) 3. Source D G S |
Ähnliche Teilenummer - 2SK3081 |
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Ähnliche Beschreibung - 2SK3081 |
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