Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK3135 Datenblatt(PDF) 6 Page - Hitachi Semiconductor |
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2SK3135 Datenblatt(HTML) 6 Page - Hitachi Semiconductor |
6 / 10 page 2SK3135(L),2SK3135(S) 6 0.1 0.3 1 3 10 30 100 010 20 30 40 50 1000 10000 3000 100 80 60 40 20 0 20 16 12 8 4 80 160 240 320 400 0 1000 100 200 20 10 0.1 0.2 2 10 100 1000 500 100 200 20 50 10 di / dt = 50 A / µs V = 0, Ta = 25 °C GS 300 20 1 100 V = 0 f = 1 MHz GS Ciss Coss Crss I = 75 A D VGS VCE V = 50 V 25 V 10 V DD V = 50 V 25 V 10 V DD 0.5 5 500 50 50 V = 10 V, V = 30 V PW = 5 µs, duty < 1 % GS DD r t d(on) t d(off) t t f 30000 Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current I (A) D Switching Characteristics |
Ähnliche Teilenummer - 2SK3135 |
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Ähnliche Beschreibung - 2SK3135 |
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