Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK3151 Datenblatt(PDF) 3 Page - Hitachi Semiconductor |
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2SK3151 Datenblatt(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SK3151 3 Main Characteristics 160 120 80 0 50 100 150 200 12 5 10 20 50 100 50 40 30 20 10 0 2 468 10 Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics 1000 300 100 300 100 10 3 1 30 Ta = 25°C 10 µs 100 µs 1 ms DC Operation (Tc = 25°C) Operation in this area is limited by R DS(on) PW = 10 ms (1 shot) 3 V 2 V 40 V = 10 V GS 3.5 V 4 V 2.5 V 100 80 60 40 20 0 12 34 5 Tc = –25°C 25°C 75°C V = 10 V Pulse Test DS Pulse Test 200 |
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