Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK3152 Datenblatt(PDF) 2 Page - Hitachi Semiconductor |
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2SK3152 Datenblatt(HTML) 2 Page - Hitachi Semiconductor |
2 / 9 page 2SK3152 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage V DSS 120 V Gate to source voltage V GSS ±20 V Drain current I D 10 A Drain peak current I D(pulse) Note1 40 A Body-drain diode reverse drain current I DR 10 A Avalanche current I AP Note3 10 A Avalanche energy E AR Note3 8.5 mJ Channel dissipation Pch Note2 25 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 120 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16 V, VDS = 0 Zero gate voltege drain current I DSS ——10 µAV DS = 120 V, VGS = 0 Gate to source cutoff voltage V GS(off) 1.0 — 2.5 V I D = 1 mA, VDS = 10 V Static drain to source on state R DS(on) — 100 130 m Ω I D = 5 A, VGS = 10 V Note4 resistance R DS(on) — 130 170 m Ω I D = 5 A, VGS = 4 V Note4 Forward transfer admittance |y fs| 5.5 9.5 — S I D = 5 A, VDS = 10 V Note4 Input capacitance Ciss — 580 — pF V DS = 10 V Output capacitance Coss — 240 — pF V GS = 0 Reverse transfer capacitance Crss — 130 — pF f = 1 MHz Turn-on delay time t d(on) — 11 — ns I D = 5 A, VGS = 10 V Rise time t r — 55 — ns R L = 6 Ω Turn-off delay time t d(off) — 140 — ns Fall time t f —80 — ns Body–drain diode forward voltage V DF — 0.9 — V I F = 10 A, VGS = 0 Body–drain diode reverse recovery time t rr — 100 — ns I F = 10 A, VGS = 0 diF/ dt = 50 A/ µs Note: 4. Pulse test |
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