Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK3155 Datenblatt(PDF) 5 Page - Hitachi Semiconductor |
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2SK3155 Datenblatt(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page 2SK3155 5 0.1 0.5 1 2 10 0.2 5 010 20 30 40 50 10000 1000 3000 300 10 30 100 200 160 120 80 40 0 20 16 12 8 4 20 40 60 80 100 0 1000 200 100 50 20 0.1 0.2 1 5 10 500 200 100 20 50 10 5 I = 15A D VGS VDS 10 5 0.5 2 Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current I (A) D Switching Characteristics 20 20 di / dt = 50 A / µs V = 0, Ta = 25 °C GS V = 100 V 50 V 25 V DD V = 100 V 50 V 25 V DD V = 0 f = 1 MHz GS Ciss Coss Crss 500 r t V = 10 V, V = 30 V PW = 5 µs, duty < 1 % GS DD t f d(on) t d(off) t |
Ähnliche Teilenummer - 2SK3155 |
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Ähnliche Beschreibung - 2SK3155 |
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