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STP90N55F4 Datenblatt(PDF) 3 Page - STMicroelectronics |
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STP90N55F4 Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 13 page STP90N55F4 Electrical ratings Doc ID 022110 Rev 1 3/13 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 55 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 90 A ID Drain current (continuous) at TC = 100 °C 65 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 360 A PTOT Total dissipation at TC = 25 °C 150 W Derating factor 1 W/°C EAS (2) 2. Starting Tj = 25 °C, ID= 32.5 A, VDD= 45 V Single pulse avalanche energy 290 mJ Tstg Storage temperature – 55 to 175 °C Tj Max. operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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