Datenblatt-Suchmaschine für elektronische Bauteile |
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SM8S33A Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SM8S33A Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 5 page SM8S10 thru SM8S43A www.vishay.com Vishay General Semiconductor Revision: 18-Sep-12 1 Document Number: 88387 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology •TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification (varied by test condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Heatsink is anode Note (1) Non-repetitive current pulse derated above TA = 25 °C PRIMARY CHARACTERISTICS VBR 11.1 V to 52.8 V PPPM (10 x 1000 μs) 6600 W PPPM (10 x 10 000 μs) 5200 W PD 8 W VWM 10 V to 43 V IFSM 700 A TJ max. 175 °C Polarity Uni-directional Package DO-218AB DO-218AB MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with 10/1000 μs waveform PPPM 6600 W with 10/10 000 μs waveform 5200 Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) PD 8.0 W Peak pulse current with 10/1000 μs waveform IPPM (1) See next table A Peak forward surge current 8.3 ms single half sine-wave IFSM 700 A Operating junction and storage temperature range TJ, TSTG -55 to +175 °C |
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