Datenblatt-Suchmaschine für elektronische Bauteile |
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KSD1691GS Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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KSD1691GS Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted * PW ≤10ms, duty Cycle≤50% Electrical Characteristics T C=25°C unless otherwise noted * Pulse test: PW ≤50µs, duty Cycle≤2% Pulsed hFE Classificntion Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 8 A IB Base Current (DC) 1 A PC Collector Dissipation (Ta=25°C) 1.3 W PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = 50V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 10 µA hFE1 hFE2 hFE3 *DC Current Gain VCE = 1V, IC = 0.1A VCE = 1V, IC = 2A VCE = 1V, IC = 5A 60 100 50 400 VCE(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.1 0.3 V VBE(sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.9 1.2 V tON Turn ON Time VCC = 10V, IC = 2A IB1 = - IB2 = 0.2A RL = 5Ω 0.2 1 µs tSTG Storage Time 1.1 2.5 µs tF Fall Time 0.2 1 µs Classification O Y G hFE 2 100 ~ 200 160 ~ 320 200 ~ 400 KSD1691 Feature • Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W (Ta=25°C) • Complementary to KSB1151 1 TO-126 1. Emitter 2.Collector 3.Base |
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