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KSD1691GS Datenblatt(PDF) 1 Page - Fairchild Semiconductor

Teilenummer KSD1691GS
Bauteilbeschribung  Low Collector-Emtter Saturation Voltage & Large Collector Current
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KSD1691GS Datenblatt(HTML) 1 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
Rev. A, February 2000
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
* PW
≤10ms, duty Cycle≤50%
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse test: PW
≤50µs, duty Cycle≤2% Pulsed
hFE Classificntion
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current (DC)
5
A
ICP
*Collector Current (Pulse)
8
A
IB
Base Current (DC)
1
A
PC
Collector Dissipation (Ta=25°C)
1.3
W
PC
Collector Dissipation (TC=25°C)
20
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
ICBO
Collector Cut-off Current
VCB = 50V, IE = 0
10
µA
IEBO
Emitter Cut-off Current
VEB = 7V, IC = 0
10
µA
hFE1
hFE2
hFE3
*DC Current Gain
VCE = 1V, IC = 0.1A
VCE = 1V, IC = 2A
VCE = 1V, IC = 5A
60
100
50
400
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.2A
0.1
0.3
V
VBE(sat)
*Base-Emitter Saturation Voltage
IC = 2A, IB = 0.2A
0.9
1.2
V
tON
Turn ON Time
VCC = 10V, IC = 2A
IB1 = - IB2 = 0.2A
RL = 5Ω
0.2
1
µs
tSTG
Storage Time
1.1
2.5
µs
tF
Fall Time
0.2
1
µs
Classification
O
Y
G
hFE 2
100 ~ 200
160 ~ 320
200 ~ 400
KSD1691
Feature
• Low Collector-Emtter Saturation Voltage & Large Collector Current
• High Power Dissipation: PC = 1.3W (Ta=25°C)
• Complementary to KSB1151
1
TO-126
1. Emitter
2.Collector
3.Base


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