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STP33N60M2 Datenblatt(PDF) 5 Page - STMicroelectronics |
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STP33N60M2 Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 20 page DocID024298 Rev 2 5/19 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics 19 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 26 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 104 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 26 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 26 A, di/dt = 100 A/µs VDD = 60 V (see Figure 23) - 375 ns Qrr Reverse recovery charge - 5.6 µC IRRM Reverse recovery current - 30 A trr Reverse recovery time ISD = 26 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 23) - 478 ns Qrr Reverse recovery charge - 7.7 µC IRRM Reverse recovery current - 32.5 A |
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Ähnliche Beschreibung - STP33N60M2 |
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