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IRFB4310PBF Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRFB4310PBF
Bauteilbeschribung  High Efficiency Synchronous Rectification in SMPS
Download  12 Pages
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFB4310PBF Datenblatt(HTML) 1 Page - International Rectifier

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01/31/06
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
www.irf.com
1
D2Pak
IRFS4310PbF
TO-220AB
IRFB4310PbF
TO-262
IRFSL4310PbF
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
HEXFET® Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
S
D
G
S
D
G
S
D
G
VDSS
100V
RDS(on) typ.
5.6m
:
max.
7.0m
:
ID
130A
Absolute Maximum Ratings
Symbol
Parameter
Units
I
D @ TC = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TC = 100°C
Continuous Drain Current, V
GS @ 10V
I
DM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dV/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
IAR
Avalanche Current
Ù
A
E
AR
Repetitive Avalanche Energy
g
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
0.50
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
0.50
–––
°C/W
RθJA
Junction-to-Ambient, TO-220
k
–––
62
RθJA
Junction-to-Ambient (PCB Mount) , D
2Pak jk
–––
40
300
Max.
130
™
92
™
550
980
See Fig. 14, 15, 22a, 22b,
300
14
-55 to + 175
± 20
2.0
10lb
xin (1.1Nxm)
PD - 14275D


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