Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF840 Datenblatt(PDF) 1 Page - Advanced Power Electronics Corp. |
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IRF840 Datenblatt(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Ease of Paralleling BVDSS 500V ▼ Fast Switching Characteristic RDS(ON) 0.85Ω ▼ Simple Drive Requirement ID 8A Description Absolute Maximum Ratings Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current 1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy 2 mJ IAR Avalanche Current A TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 1.0 ℃ /W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃ /W Data & specifications subject to change without notice Parameter Storage Temperature Range -55 to 150 Parameter Linear Derating Factor IRF840 ±20 Rating 500 RoHS-compliant Product 8 32 125 8 5.1 320 1 -55 to 150 200430071-1/4 G D S TO-220(P) The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. G D S APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. |
Ähnliche Teilenummer - IRF840_14 |
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Ähnliche Beschreibung - IRF840_14 |
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