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74HCT08DB Datenblatt(PDF) 6 Page - NXP Semiconductors |
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74HCT08DB Datenblatt(HTML) 6 Page - NXP Semiconductors |
6 / 16 page 74HC_HCT08 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 4 — 6 September 2012 6 of 16 NXP Semiconductors 74HC08; 74HCT08 Quad 2-input AND gate [1] tpd is the same as tPHL and tPLH. [2] tt is the same as tTHL and tTLH. [3] CPD is used to determine the dynamic power dissipation (PD in W): PD =CPD VCC2 fi N+ (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (C L VCC 2 f o) = sum of outputs. 11. Waveforms CPD power dissipation capacitance per package; VI =GND to VCC [3] -10- - - pF 74HCT02 tpd propagation delay nA, nB to nY; see Figure 6 [1] VCC = 4.5 V - 14 24 30 36 ns VCC = 5.0 V; CL =15pF - 11 - - - ns tt transition time VCC = 4.5 V; see Figure 6 [2] - 7 15 19 22 ns CPD power dissipation capacitance per package; VI =GND to VCC 1.5 V [3] -20- - - pF Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for load circuit see Figure 7. Symbol Parameter Conditions 25 C 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) Measurement points are given in Table 9. VOL and VOH are typical voltage output levels that occur with the output load. Fig 6. Input to output propagation delays *1' 92+ 92/ Q< RXWSXW DDD 9, W3+/ W7+/ W7/+ W3/+ 9< 90 90 9; Q$Q%LQSXW Table 8. Measurement points Type Input Output VM VM VX VY 74HC08 0.5VCC 0.5VCC 0.1VCC 0.9VCC 74HCT08 1.3 V 1.3 V 0.1VCC 0.9VCC |
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