Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1671 Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA1671 Datenblatt(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SA1671 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A -0.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-3A ; VCE=-4V 50 180 fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz hFE classifications O P Y 50-100 70-140 90-180 |
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Ähnliche Beschreibung - 2SA1671 |
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