Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3638_2014 Datenblatt(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC3638_2014 Datenblatt(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 4 page JMnic Product Specification Silicon NPN Power Transistors 2SC3638 DESCRIPTION ・With TO-3PN package ・High voltage ,high speed ・High reliability APPLICATIONS ・Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-peak 25 A PC Collector power dissipation TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol |
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