Datenblatt-Suchmaschine für elektronische Bauteile |
|
2SC3866_2014 Datenblatt(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
|
2SC3866_2014 Datenblatt(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 2 page Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3866 DESCRIPTION ・High Breakdown Voltage- : V(BR)CBO= 900V(Min) ・High Switching Speed ・High Reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.5 ℃/W |
Ähnliche Teilenummer - 2SC3866_2014 |
|
Ähnliche Beschreibung - 2SC3866_2014 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |