Datenblatt-Suchmaschine für elektronische Bauteile |
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SDUR120CT Datenblatt(PDF) 4 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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SDUR120CT Datenblatt(HTML) 4 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
4 / 5 page SANGDEST MICROELECTRONICS Technical Data Green Products Data Sheet N1299, Rev. - • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SDUR/B20120CT Electrical Characteristics: Characteristics Symbol Condition Max. Units Max. Forward Voltage Drop* VF1 @ 10A, Pulse, TJ = 25°C 2.94 V VF2 @ 10A, Pulse, TJ = 150°C 1.96 V IR1 @VR = rated VR TJ = 25°C 60 µ A Max. Reverse Current* IR2 @VR = rated VR TJ =150 °C 0.25 mA Max. Reverse Recovery Time trr IF=1A, -di/dt=50A/us,VR=30V, and TJ = 25°C 50 ns * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Max. Junction Temperature TJ - -55 to +175 °C Max. Storage Temperature Tstg - -55 to +150 °C Maximum Thermal Resistance Junction to Case RθJC DC operation 5 °C/W Approximate Weight wt - 2/1.85 g Case Style TO-220AB/D²PAK |
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