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1N3880 Datenblatt(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Teilenummer 1N3880
Bauteilbeschribung  Silicon Fast Recovery Diode
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Hersteller  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

1N3880 Datenblatt(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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VRRM = 50 V - 400 V
IF = 6 A
Features
• High Surge Capability
DO-4 Package
• Types up to 400 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R)
Unit
Repetitive peak reverse
voltage
VRRM
50
100
200
300
V
RMS reverse voltage
VRMS
35
70
140
210
V
280
1N3879 thru 1N3883R
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Fast
Recovery Diode
2. Reverse polarity (R): Stud is anode.
1N3883 (R)
400
DC blocking voltage
VDC
50
100
200
300
V
Continuous forward current
IF
66
6
6
A
Operating temperature
Tj
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Parameter
Symbol
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R)
Unit
Diode forward voltage
1.4
1.4
1.4
1.4
15
15
15
15
μA
33
3
3
mA
Recovery Time
Maximum reverse recovery
time
TRR
200
200
200
200
nS
Thermal characteristics
Thermal resistance, junction
- case
RthJC
2.5
2.5
2.5
2.5
°C/W
1N3883 (R)
2.5
6
400
90
15
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
VR = 50 V, Tj = 150 °C
V
3
200
VR = 50 V, Tj = 25 °C
IF = 6 A, Tj = 25 °C
TC ≤ 100 °C
Conditions
90
90
TC = 25 °C, tp = 8.3 ms
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
A
Reverse current
IR
VF
1.4
-55 to 150
-55 to 150
IF,SM
90
90
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1


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