Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD2494_2015 Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD2494_2015 Datenblatt(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Darlington Power Transistors 2SD2494 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=50mA; IB=0 110 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=5m A 2.5 V VBEsat Base-emitter saturation voltage IC=5 A;IB=5m A 3.0 V ICBO Collector cut-off current VCB=110V IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=5A ; VCE=4V 5000 fT Transition frequency IC=0.5A ; VCE=12V 60 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 55 pF Switching times ton Turn-on time 0.8 μs ts Storage time 6.2 μs tf Fall time IC=5A;RL=6Ω IB1=-IB2=5mA VCC=30V 1.1 μs hFE classifications O P Y 5000-12000 6500-20000 15000-30000 |
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