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BAP70-04W_2015 Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Teilenummer BAP70-04W_2015
Bauteilbeschribung  Silicon PIN diode
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Hersteller  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Direct Link  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

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BAP70-04W_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2007
2 of 7
NXP Semiconductors
BAP70-04W
Silicon PIN diode
4.
Marking
5.
Limiting values
6.
Thermal characteristics
7.
Characteristics
Table 3.
Marking codes
Type number
Marking code
BAP70-04W
1Np
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VR
continuous reverse voltage
-
50
V
IF
continuous forward current
-
100
mA
Ptot
total power dissipation
Ts = 90 °C
-
260
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-s)
thermal resistance from junction to soldering point
230
K/W
Table 6.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage
IF = 50 mA
-
0.95
1.1
V
IR
reverse current
VR = 50 V
-
-
100
nA
Cd
diode capacitance
see Figure 1; f = 1 MHz
VR = 0 V
-
600
-
fF
VR = 1 V
-
430
-
fF
VR = 20 V
-
250
300
fF
rD
diode forward
resistance
see Figure 2; f = 100 MHz
IF = 0.5 mA
-
77
100
IF = 1 mA
-
40
50
IF = 10 mA
-
5.4
7
IF = 100 mA
-
1.4
1.9
τL
charge carrier life time
when switched from IF =10mAtoIR = 6 mA;
RL = 100 Ω; measured at IR = 3 mA
-
1.25
-
µs
LS
series inductance
IF = 100 mA; f = 100 MHz
-
1.4
-
nH


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