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IRFBF30 Datenblatt(PDF) 1 Page - Vishay Siliconix

Teilenummer IRFBF30
Bauteilbeschribung  Power MOSFET
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRFBF30 Datenblatt(HTML) 1 Page - Vishay Siliconix

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Document Number: 91122
www.vishay.com
S11-0516-Rev. B, 21-Mar-11
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
IRFBF30, SiHFBF30
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The TO-220AB package is universially preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 36 mH, Rg = 25 , IAS = 3.6 A (see fig. 12).
c. ISD  3.6 A, dI/dt  70 A/μs, VDD  600, TJ  150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
900
RDS(on) ()VGS = 10 V
3.7
Qg (Max.) (nC)
78
Qgs (nC)
10
Qgd (nC)
42
Configuration
Single
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
IRFBF30PbF
SiHFBF30-E3
SnPb
IRFBF30
SiHFBF30
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMITE
UNIT
Drain-Source Voltage
VDS
900
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
3.6
A
TC = 100 °C
2.3
Pulsed Drain Currenta
IDM
14
Linear Derating Factor
1.0
W/°C
Single Pulse Avalanche Energyb
EAS
250
mJ
Repetitive Avalanche Currenta
IAR
3.6
A
Repetitive Avalanche Energya
EAR
13
mJ
Maximum Power Dissipation
TC = 25 °C
PD
125
W
Peak Diode Recovery dV/dtc
dV/dt
1.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply


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