Datenblatt-Suchmaschine für elektronische Bauteile |
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BF861_2015 Datenblatt(PDF) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF861_2015 Datenblatt(HTML) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
5 / 12 page 1997 Sep 04 5 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C Fig.3 Drain current as a function of gate-source cut-off voltage; typical values. VDS =8V. 0 30 20 10 0 0.5 1 2 MBD461 1.5 I DSS (mA) V (V) GSoff Fig.4 Common-source output conductance as a function of drain current; typical values. VDS =8V. VGS =0. handbook, halfpage 0 300 200 100 0 525 MBD462 10 15 20 I DSS (mA) gos ( µS) Fig.5 Forward transfer admittance as a function of drain current; typical values. VDS =8V. VGS =0. handbook, halfpage 0 30 20 10 0 525 MBD463 10 15 20 I DSS (mA) y fs (mS) Fig.6 Forward transfer admittance as a function of drain current; typical values. VDS =8V. handbook, halfpage 0 5 10 20 25 0 20 MBD464 15 15 10 5 D I (mA) BF861C BF861B BF861A y fs (mS) |
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