Datenblatt-Suchmaschine für elektronische Bauteile |
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BF998WR_2015 Datenblatt(PDF) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF998WR_2015 Datenblatt(HTML) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
5 / 12 page 1997 Sep 05 5 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR Fig.3 Transfer characteristics; typical values. VDS =8V. Tamb =25 °C. 0 24 16 8 0 1 1 MGC471 I D (mA) V (V) G1 S V = 4 V 3 V 2 V 1 V 0 V G2 S Fig.4 Output characteristics; typical values. VG2-S =4V. Tamb =25 °C. 0 24 16 8 0 210 MGC470 46 8 I D (mA) V (V) DS 0.4 V 0.3 V 0.2 V 0.1 V −0.1 V 0 V V = G1 S −0.2 V −0.3 V −0.4 V −0.5 V VDS = 8 V; VG2 = 4 V; Tamb =25 °C. Fig.5 Drain current as a function of gate 1 voltage; typical values. −1600 400 24 0 8 16 MGC472 −1200 −800 −400 0 max typ min ID (mS) V (mV) G1 Fig.6 Forward transfer admittance as a function of drain current; typical values. VDS = 8 V; Tamb =25 °C. 020 30 0 6 MGC473 12 18 24 4 8 12 16 y fs (mS) I (mA) D V = 0 V G2 − S 0.5 V 4 V 3 V 2 V 1 V |
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