Datenblatt-Suchmaschine für elektronische Bauteile |
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BF1101_2015 Datenblatt(PDF) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1101_2015 Datenblatt(HTML) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
8 / 16 page 1999 May 14 8 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR Fig.17 Input admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 12 mA; Tamb =25 °C. handbook, halfpage MGS311 102 10 1 10−1 10 102 103 f (MHz) yis (mS) bis gis Fig.18 Reverse transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 12 mA; Tamb =25 °C. handbook, halfpage MGS312 102 ϕrs (deg) −102 −1 −10 10 1 10 102 103 f (MHz) |yrs| (mS) |yrs| ϕrs Fig.19 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 12 mA; Tamb =25 °C. handbook, halfpage MGS313 102 ϕfs (deg) −102 −1 −10 10 1 10 102 103 f (MHz) |yfs| (mS) ϕfs |yfs| Fig.20 Output admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 12 mA; Tamb =25 °C. handbook, halfpage MGS314 10 10−1 1 10 102 103 f (MHz) yos (mS) bos gos |
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