Datenblatt-Suchmaschine für elektronische Bauteile |
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BF1101_2015 Datenblatt(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1101_2015 Datenblatt(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
3 / 16 page 1999 May 14 3 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature of the soldering point of the source lead. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 7V ID drain current − 30 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation Ts ≤ 110 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − +150 °C SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 200 K/W Fig.4 Power derating curve. handbook, halfpage 0 50 100 200 250 0 200 MGL615 150 150 100 50 Ptot (mW) Ts (°C) |
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Ähnliche Beschreibung - BF1101_2015 |
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