Datenblatt-Suchmaschine für elektronische Bauteile |
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BF1206_2015 Datenblatt(PDF) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1206_2015 Datenblatt(HTML) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
10 / 21 page 2003 Nov 17 10 Philips Semiconductors Product specification Dual N-channel dual-gate MOS-FET BF1206 handbook, halfpage MLE268 10 f (MHz) Yis (mS) 102 103 102 10 1 10−1 bis gis Fig.15 Input admittance as a function of frequency; typical values; amplifier a. VDS = 5 V; VG2 = 4 V; ID = 18 mA; Tamb =25 °C. handbook, halfpage MLE269 10 f (MHz) 102 103 103 102 10 1 −103 −102 −10 −1 ϕrs (deg) yrs ( µS) yrs ϕrs Fig.16 Reverse transfer admittance and phase as a function of frequency; typical values; amplifier a. VDS = 5 V; VG2 = 4 V; ID = 18 mA; Tamb =25 °C. handbook, halfpage 10 1 102 MLE270 10 f (MHz) 103 102 −102 −10 −1 ϕfs (deg) yfs (mS) yfs −ϕfs Fig.17 Forward transfer admittance and phase as a function of frequency; typical values; amplifier a. VDS = 5 V; VG2 = 4 V; ID = 18 mA; Tamb =25 °C. handbook, halfpage MLE271 10 f (MHz) Yos (mS) 102 103 10 1 10−2 10−1 bos gos Fig.18 Output admittance as a function of frequency; typical values; amplifier a. VDS = 5 V; VG2 = 4 V; ID = 18 mA; Tamb =25 °C. |
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