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STX13003G-AP Datenblatt(PDF) 3 Page - STMicroelectronics |
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STX13003G-AP Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 11 page STX13003 Electrical characteristics Doc ID 7928 Rev 6 3/11 2 Electrical characteristics Tcase = 25 °C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = 700 V VCE = 700 V TC = 125 °C 1 5 mA mA V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 10 mA 9 18 V VCEO(sus) (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %. Collector-emitter sustaining voltage (IB = 0) IC = 10 mA 400 V VCE(sat) (1) Collector-emitter saturation voltage IC = 0.5 A IB = 100 mA IC = 1 A IB = 250 mA IC = 1.5 A IB = 500 mA 0.5 1 1.5 V V V VBE(sat) (1) Base-emitter saturation voltage IC = 0.5 A IB = 100 mA IC = 1 A IB = 250 mA 1 1.2 V V hFE DC current gain IC = 0.5 A VCE = 2 V IC = 1 A VCE = 2 V 8 5 25 25 tr ts tf Resistive load Rise time Storage time Fall time IC = 1 A ___ _ tp = 25 µs IB1 = -IB2 = 200 mA VCC = 125 V Figure 12 1 4 0.7 µs µs µs ts Inductive Load Storage time IC = 1 A Vclamp = 300 V IB1 = 200 mA VBE(off) = -5 V L = 50 mH RBB = 0 Figure 13 0.8 µs |
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