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KA7818ETU Datenblatt(PDF) 10 Page - Fairchild Semiconductor |
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KA7818ETU Datenblatt(HTML) 10 Page - Fairchild Semiconductor |
10 / 27 page © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com KA78XXE / KA78XXAE Rev. 1.1.1 10 Electrical Characteristics (KA7815E) Refer to test circuit, 0 °C < TJ < 125°C, IO = 500 mA, VI = 23 V, CI = 0.33 μF, CO = 0.1 μF, unless otherwise specified. Notes: 15. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 16. These parameters, although guaranteed, are not 100% tested in production. Symbol Parameter Conditions Min. Typ. Max. Unit VO Output Voltage TJ = +25°C 14.40 15.00 15.60 V 5.0 mA ≤ IO ≤ 1.0 A, PO ≤ 15 W, VI = 17.5 V to 30 V 14.25 15.00 15.75 Regline Line Regulation(15) TJ = +25°C VI = 17.5 V to 30 V 11 300 mV VI = 20 V to 26 V 3 150 Regload Load Regulation(15) TJ = +25°C IO = 5 mA to 1.5 A 12 300 mV IO = 250 mA to 750 mA 4 150 IQ Quiescent Current TJ = +25°C5.2 8.0 mA ΔIQ Quiescent Current Change IO = 5 mA to 1.0 A 0.5 mA VI = 17.5 V to 30 V 1.0 ΔVO/ΔT Output Voltage Drift(16) IO = 5 mA -1 mV/ °C VN Output Noise Voltage f = 10 Hz to 100 kHz, TA = +25°C90 μV/Vo RR Ripple Rejection(16) f = 120 Hz, VI = 18.5 V to 28.5 V 54 70 dB VDrop Dropout Voltage IO = 1 A, TJ= +25°C2 V RO Output Resistance(16) f = 1 kHz 19 m Ω ISC Short-Circuit Current VI = 35 V, TA= +25°C250 mA IPK Peak Current(16) TJ =+25°C2.2 A |
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