Datenblatt-Suchmaschine für elektronische Bauteile |
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ST30150C Datenblatt(PDF) 4 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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ST30150C Datenblatt(HTML) 4 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
4 / 5 page SANGDEST MICROELECTRONICS Technical Data Green Products Data Sheet N1401, Rev. - • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • ST30150C STB30150C Electrical Characteristics: Characteristics Symbol Condition Max. Units VF1 @ 15A, Pulse, TJ = 25 °C 1.36 V Forward Voltage Drop (per leg) * VF2 @ 15A, Pulse, TJ = 125 °C 0.79 V IR1 @VR = rated VR TJ = 25 °C 0.2 mA Reverse Current (per leg) IR2 @VR = rated VR TJ = 125 °C 20 mA Junction Capacitance (per leg) CT @VR = 5V, TC = 25 °C fSIG = 1MHz 800 pF Voltage Rate of Change dv/dt - 10,000 V/ µs * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Junction Temperature TJ - -55 to +150 °C Storage Temperature Tstg - -55 to +150 °C Maximum Thermal Resistance Junction to Case(per leg) RθJC DC operation 2.2 °C/W Approximate Weight wt - 2/1.85 g Case Style TO-220AB/ D 2PAK |
Ähnliche Teilenummer - ST30150C |
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Ähnliche Beschreibung - ST30150C |
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