Datenblatt-Suchmaschine für elektronische Bauteile |
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FCA47N60F Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FCA47N60F Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2007 Fairchild Semiconductor Corporation FCA47N60F Rev. C2 www.fairchildsemi.com 1 Absolute Maximum Ratings T C = 25 oC unless otherwise noted. Symbol Parameter FCA47N60F Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 47 29.7 A A IDM Drain Current - Pulsed (Note 1) 141 A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ IAR Avalanche Current (Note 1) 47 A EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns PD Power Dissipation (TC = 25°C) - Derate Above 25 °C 417 3.33 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C FCA47N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 47 A, 73 m Ω Features • 650 V @ TJ = 150 °C •Typ. RDS(on) = 62 mΩ • Fast Recovery Time (Typ. Trr = 240 ns) • Ultra Low Gate Charge (Typ. Qg = 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch- ing performance, dv/dt rate and higher avalanche energy. Con- sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Super- FET FRFET® MOSFET’s optimized body diode reverse recov- ery performance can remove additional component and improve system reliability. Thermal Characteristics Symbol Parameter FCA47N60F Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 41.7 °C/W TO-3PN G D S G S D May 2014 |
Ähnliche Teilenummer - FCA47N60F_15 |
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Ähnliche Beschreibung - FCA47N60F_15 |
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