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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FDS4559_F085 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDS4559_F085 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  2008 Fairchild Semiconductor Corporation FDS4559_F085 60V Complementary PowerTrench MOSFET General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Power management • LCD backlight inverter Features • Q1: N-Channel 4.5 A, 60 V R DS(on) = 55 mΩ @ VGS = 10V R DS(on) = 75 mΩ @ VGS = 4.5V • Q2: P-Channel –3.5 A, –60 V R DS(on) = 105 mΩ @ VGS = –10V R DS(on) = 135 mΩ @ VGS = –4.5V S D S S SO-8 D D D G D1 D1 D2 D2 S1 G1 S2 G2 Pin 1 SO-8 4 3 2 1 5 6 7 8 Q1 Q2 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage 60 –60 V VGSS Gate-Source Voltage ±20 ±20 V ID Drain Current - Continuous (Note 1a) 4.5 –3.5 A - Pulsed 20 –20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.2 (Note 1c) 2 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity units FDS4559 13” 12mm 2500 tm October 2008 FDS4559_F085 Rev A (W) FDS4559_ F085 Qualified to AEC Q101 RoHS Compliant • • |
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