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CA3039 Datenblatt(PDF) 2 Page - Intersil Corporation

Teilenummer CA3039
Bauteilbeschribung  Diode Array
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Hersteller  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

CA3039 Datenblatt(HTML) 2 Page - Intersil Corporation

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7-19
Absolute Maximum Ratings
Thermal Information
Inverse Voltage (PIV) for: D1 - D5 . . . . . . . . . . . . . . . . . . . . . . . . 5V
D6 . . . . . . . . . . . . . . . . . . . . . . . 0.5V
Diode-to-Substrate Voltage (VDI) for D1 - D5 . . . . . . . . . . . .20V, -1V
(Terminal 1, 4, 5, 8 or 12 to Terminal 10)
DC Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Recurrent Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . . 100mA
Forward Surge Current (IF(SURGE)). . . . . . . . . . . . . . . . . . . . 100mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Thermal Resistance (Typical, Note 1)
θJA (oC/W) θJC (oC/W)
Metal Can Package . . . . . . . . . . . . . . .
200
120
SOIC Package . . . . . . . . . . . . . . . . . . .
220
N/A
Maximum Power Dissipation (Any One Diode) . . . . . . . . . . . 100mW
Maximum Junction Temperature (Metal Can Package) . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25
oC; Characteristics apply for each diode unit, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC Forward Voltage Drop (Figure 1)
VF
IF = 50µA
-
0.65
0.69
V
IF = 1mA
-
0.73
0.78
V
IF = 3mA
-
0.76
0.80
V
IF = 10mA
-
0.81
0.90
V
DC Reverse Breakdown Voltage
V(BR)R
IR = -10µA5
7
-
V
DC Reverse Breakdown Voltage Between Any
Diode Unit and Substrate
V(BR)R
IR = -10µA20
-
-
V
DC Reverse (Leakage) Current (Figure 2)
IR
VR = -4V
-
0.016
100
nA
DC Reverse (Leakage) Current Between Any
Diode Unit and Substrate (Figure 3)
IR
VR = -10V
-
0.022
100
nA
Magnitude of Diode Offset Voltage (Note 2)
(Figure 1)
IF = 1mA
-
0.5
5.0
mV
Temperature Coefficient of |VF1 - VF2| (Figure 4)
IF = 1mA
-
1.0
-
µV/oC
Temperature Coefficient of Forward Drop
(Figure 5)
IF = 1mA
-
-1.9
-
mV/oC
DC Forward Voltage Drop for Anode-to-
Substrate Diode (DS)
VF
IF = 1mA
-
0.65
-
V
Reverse Recovery Time
tRR
IF = 10mA, IR = -10mA
-
1.0
-
ns
Diode Resistance (Figure 6)
RD
f = 1kHz, IF = 1mA
25
30
45
Diode Capacitance (Figure 7)
CD
VR = -2V, IF = 0
-
0.65
-
pF
Diode-to-Substrate Capacitance (Figure 8)
CDI
VDI = 4V, IF = 0
-
3.2
-
pF
NOTE:
2. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units.
V
F1
V
F2
∆ V
F1
V
F2
∆T
----------------------------------
∆V
F
∆T
-----------
CA3039


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