Datenblatt-Suchmaschine für elektronische Bauteile |
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CA3039 Datenblatt(PDF) 2 Page - Intersil Corporation |
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CA3039 Datenblatt(HTML) 2 Page - Intersil Corporation |
2 / 4 page 7-19 Absolute Maximum Ratings Thermal Information Inverse Voltage (PIV) for: D1 - D5 . . . . . . . . . . . . . . . . . . . . . . . . 5V D6 . . . . . . . . . . . . . . . . . . . . . . . 0.5V Diode-to-Substrate Voltage (VDI) for D1 - D5 . . . . . . . . . . . .20V, -1V (Terminal 1, 4, 5, 8 or 12 to Terminal 10) DC Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Recurrent Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . . 100mA Forward Surge Current (IF(SURGE)). . . . . . . . . . . . . . . . . . . . 100mA Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Thermal Resistance (Typical, Note 1) θJA (oC/W) θJC (oC/W) Metal Can Package . . . . . . . . . . . . . . . 200 120 SOIC Package . . . . . . . . . . . . . . . . . . . 220 N/A Maximum Power Dissipation (Any One Diode) . . . . . . . . . . . 100mW Maximum Junction Temperature (Metal Can Package) . . . . . . . 175oC Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications TA = 25 oC; Characteristics apply for each diode unit, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS DC Forward Voltage Drop (Figure 1) VF IF = 50µA - 0.65 0.69 V IF = 1mA - 0.73 0.78 V IF = 3mA - 0.76 0.80 V IF = 10mA - 0.81 0.90 V DC Reverse Breakdown Voltage V(BR)R IR = -10µA5 7 - V DC Reverse Breakdown Voltage Between Any Diode Unit and Substrate V(BR)R IR = -10µA20 - - V DC Reverse (Leakage) Current (Figure 2) IR VR = -4V - 0.016 100 nA DC Reverse (Leakage) Current Between Any Diode Unit and Substrate (Figure 3) IR VR = -10V - 0.022 100 nA Magnitude of Diode Offset Voltage (Note 2) (Figure 1) IF = 1mA - 0.5 5.0 mV Temperature Coefficient of |VF1 - VF2| (Figure 4) IF = 1mA - 1.0 - µV/oC Temperature Coefficient of Forward Drop (Figure 5) IF = 1mA - -1.9 - mV/oC DC Forward Voltage Drop for Anode-to- Substrate Diode (DS) VF IF = 1mA - 0.65 - V Reverse Recovery Time tRR IF = 10mA, IR = -10mA - 1.0 - ns Diode Resistance (Figure 6) RD f = 1kHz, IF = 1mA 25 30 45 Ω Diode Capacitance (Figure 7) CD VR = -2V, IF = 0 - 0.65 - pF Diode-to-Substrate Capacitance (Figure 8) CDI VDI = 4V, IF = 0 - 3.2 - pF NOTE: 2. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units. V F1 V F2 – ∆ V F1 V F2 – ∆T ---------------------------------- ∆V F ∆T ----------- CA3039 |
Ähnliche Teilenummer - CA3039 |
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Ähnliche Beschreibung - CA3039 |
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