Datenblatt-Suchmaschine für elektronische Bauteile |
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CA3045F Datenblatt(PDF) 2 Page - Intersil Corporation |
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CA3045F Datenblatt(HTML) 2 Page - Intersil Corporation |
2 / 6 page 2 Absolute Maximum Ratings Thermal Information Collector-to-Emitter Voltage (VCEO) . . . . . . . . . . . . . . . . . . . . . 15V Collector-to-Base Voltage (VCBO) . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-to-Substrate Voltage (VCIO, Note 1) . . . . . . . . . . . . . . 20V Emitter-to-Base Voltage (VEBO) . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . 180 N/A CERDIP Package . . . . . . . . . . . . . . . . . 150 75 SOIC Package . . . . . . . . . . . . . . . . . . . 220 N/A Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW Maximum Junction Temperature (Hermetic Packages). . . . . . . .175oC Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor ac- tion. 2. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications TA = 25 oC, characteristics apply for each transistor in CA3045 and CA3046 as specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS DC CHARACTERISTICS Collector-to-Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 20 60 - V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 - V Collector-to-Substrate Breakdown Voltage V(BR)CIO IC = 10µA, ICI = 0 20 60 - V Emitter-to-Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 7 - V Collector Cutoff Current (Figure 1) ICBO VCB = 10V, IE = 0 - 0.002 40 nA Collector Cutoff Current (Figure 2) ICEO VCE = 10V, IB = 0 - See Fig. 2 0.5 µA Forward Current Transfer Ratio (Static Beta) (Note 3) (Figure 3) hFE VCE = 3V IC = 10mA - 100 - - IC = 1mA 40 100 - - IC = 10µA- 54 - - Input Offset Current for Matched Pair Q1 and Q2. |IIO1 - IIO2| (Note 3) (Figure 4) VCE = 3V, IC = 1mA - 0.3 2 µA Base-to-Emitter Voltage (Note 3) (Figure 5) VBE VCE = 3V IE = 1mA - 0.715 - V IE = 10mA - 0.800 - V Magnitude of Input Offet Voltage for Differential Pair |VBE1 - VBE2| (Note 3) (Figures 5, 7) VCE = 3V, IC = 1mA - 0.45 5 mV Magnitude of Input Offset Voltage for Isolated Transistors |VBE3 - VBE4|, |VBE4 - VBE5|, |VBE5 - VBE3| (Note 3) (Figures 5, 7) VCE = 3V, IC = 1mA - 0.45 5 mV Temperature Coefficient of Base-to-Emitter Voltage (Figure 6) VCE = 3V, IC = 1mA - -1.9 - mV/oC Collector-to-Emitter Saturation Voltage VCES IB = 1mA, IC = 10mA - 0.23 - V Temperature Coefficient: Magnitude of Input Off- set Voltage (Figure 7) VCE = 3V, IC = 1mA - 1.1 - µV/oC DYNAMIC CHARACTERISTICS Low Frequency Noise Figure (Figure 9) NF f = 1kHz, VCE = 3V, IC = 100µA, Source Resistance = 1k Ω - 3.25 - dB Low Frequency, Small Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio (Figure 11) hFE f = 1kHz, VCE = 3V, IC = 1mA - 110 - - Short Circuit Input Impedance (Figure 11) hIE f = 1kHz, VCE = 3V, IC = 1mA - 3.5 - k Ω ∆V BE ∆T --------------- ∆V IO ∆T ---------------- CA3045, CA3046 |
Ähnliche Teilenummer - CA3045F |
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Ähnliche Beschreibung - CA3045F |
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