PD10M440H_15 datasheet(3/3 Pages) NI

Teilenummer	PD10M440H

Bauteilbeschribung	85A 450節?00V

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Hersteller	NI [National Instruments Corporation]

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■定格・特性曲線

120

100

80

60

40

20

0

02468

10

12

DRAIN TO SOURCE VOLTAGE VDS (V)

TC=25℃ 250μs Pulse Test

10V

6V

4V

VGS=5V

Fig. 1 Typical Output Characteristics

30

24

18

12

6

0

1

2

5

10

20

50

100

DRAIN TO SOURCE VOLTAGE VDS (V)

VGS=0V f=1kHz

Coss

Crss

Ciss

Fig. 4 Typical Capacitance

Fig. 4 Vs. Drain-Source Voltage

1000

500

100

200

50

20

10

2

5

10

20

50

200

100

RG=7Ω VDD=250V TC=25℃ 80μs Pulse Test

DRAIN CURRENT ID (A)

td(off)

td(on)

tr

tf

Fig. 7 Typical Switching Time

Fig. 7 Vs. Drain Current

500

50

200

100

20

10

5

1

2

0.5

1

2

5

10

20

50 100

500

200

1000

DRAIN TO SOURCE VOLTAGE VDS (V)

TC=25℃ Tj=150℃MAX Single Pulse

10μs

1ms

10ms

DC

100μs

−441H −440H

Operation in this area

is limited by RDS (on)

Fig. 10 Maximum Safe Operating Area

12

10

8

6

4

2

0

4

8

12

16

GATE TO SOURCE VOLTAGE VGS (V)

TC=25℃ 250μs Pulse Test

ID=85A

40A

20A

Fig. 2 Typical Drain-Source On-Voltage

Fig. 2 Vs. Gate-Source Voltage

16

12

8

4

0

100

200

300

400

500

600

TOTAL GATE CHRAGE Qg (nC)

ID=50A

100V

250V

400V

VDD=

Fig. 5 Typical Gate Charge

Fig. 5 Vs. Gate-Source Voltage

180

150

120

90

60

30

0

0.4

0.8

1.2

1.6

2.0

2.4

SOURCE TO DRAIN VOLTAGE VSD (V)

250μs Pulse Test

Tj=125℃

Tj=25℃

Fig. 8 Typical Source-Drain Diode Forward

Fig. 8 Characteristics

10

-2

2

10

0

5

2

10

-1

5

2

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

PULSE DURATION t (s)

Per Unit Base

Rth(j-c)=0.171℃/W

1 Shot Pulse

Fig. 11-1

Normalized Transient Thermal

impedance(MOSFET)

24

20

16

12

8

4

0

-40

0

40

80

120

160

JUNCTION TEMPERATURE Tj ( )

VGS=10V 250μs Pulse Test

ID=85A

40A

20A

℃

Fig. 3 Typical Drain-Source On Voltage

Fig. 3 Vs. Junction Temperature

10

5

1

2

0.5

0.2

0.1

2

5

10

20

50

100

200

ID=40A VDD=250V TC=25℃ 80μs Pulse Test

SERIES GATE IMPEDANCE RG ( )

Ω

toff

ton

Fig. 6 Typical Switching Time

Fig. 6 Vs. Series Gate impedance

500

200

50

100

20

10

5

0

100

200

300

400

500

600

-dis/dt (A/

μs)

trr

IR

IS=85A IS=40A Tj=150℃

Fig. 9 Typical Reverse Recovery Characteristics

10

-2

2

10

0

5

2

10

-1

5

2

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

PULSE DURATION t (s)

Per Unit Base

Rth(j-c)=1.2℃/W

1 Shot Pulse

Fig. 11-2

Normalized Transient Thermal

impedance(DIODE)

Ähnliche Beschreibung - PD10M440H_15

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
National Instruments Co...	PD7M440L	121Kb / 3P	50A 450節?00V
	PD4M440L	119Kb / 3P	30A 450節?00V
	PD7M440H	114Kb / 3P	50A 450節?00V
	PD10M440L	117Kb / 3P	70A 450節?00V
	PD4M440H	117Kb / 3P	30A 450節?00V
Nihon Inter Electronics...	PD10M440H	123Kb / 3P	85A 450~500V
Laird Tech Smart Techno...	CMD69273	2Mb / 3P	698節?60 MHz/1710節?700 MHz 2
Shenzhen Titan Micro El...	DMX512	157Kb / 2P	DC 12節?4V
Source Photonics, Inc.	FTM-8012S-GG	383Kb / 8P	1.0625節?.25Gbps GBIC Transceiver
Source Photonics, Inc.	FTM-3012S-GG	237Kb / 10P	1.0625節?.25Gbps GBIC Transceiver

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