Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1816-T Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1816-T Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SD1816 ■ Features ● Low Collector-to-Emitter Saturation Voltage ● Fast Switching Speed ● High fT. ● Complementary to 2SB1216 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 4 Collector Current - Pulse ICP 8 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature Range Tstg -40 to 150 V ℃ A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA, IE= 0 120 Collector- emitter breakdown voltage VCEO Ic= 1 mA, RBE= ∞ 100 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 6 Collector-base cut-off current ICBO VCB= 100 V , IE= 0 1 Emitter cut-off current IEBO VEB= 5V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=2 A, IB=200mA 0.15 0.4 Base - emitter saturation voltage VBE(sat) IC=2 A, IB=200mA 0.9 1.2 hFE(1) VCE= 5V, IC= 500mA 70 400 hFE(2) VCE= 5V, IC= 3 A 40 Turn-on Time ton 100 Storage Time tstg 900 Fall Time tf 50 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 40 pF Transition frequency fT VCE= 10V, IC= 500 mA 180 MHz V uA See Test Circuit ns DC current gain V ■ Classification of hfe(1) Type 2SD1816-Q 2SD1816-R 2SD1816-S 2SD1816-T Range 70-140 100-200 140-280 200-400 |
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