2SD2537-V datasheet(1/3 Pages) KEXIN

Teilenummer	2SD2537-V

Bauteilbeschribung	NPN Transistors

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Transistors

NPN Transistors

2SD2537

■

Features

●

High DC current gain.

●

High emitter-base voltage.

●

Low saturation voltage.

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

30

Collector - Emitter Voltage

VCEO

25

Emitter - Base Voltage

VEBO

9

Collector Current - Continuous

IC

1.2

Collector Current - Pulse (Note.1)

ICP

2

0.5

2

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

A

Collector Power Dissipation

PC

W

Note.1: Single pulse Pw=10ms

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

30

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， IB= 0

25

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

9

Collector-base cut-off current

ICBO

VCB= 30 V , IE= 0

0.3

Emitter cut-off current

IEBO

VEB= 9 V , IC=0

0.3

Collector-emitter saturation voltage

VCE(sat) IC=500 mA, IB=10mA

0.3

Base - emitter saturation voltage

VBE(sat) IC=500 mA, IB=10mA

1.2

DC current gain

hFE

VCE= 5V, IC= 500 mA

820

2700

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

20

pF

Transition frequency

fT

VCE= 10V, IE= -50mA,f=100MHz

200

MHz

V

uA

■

Classification of hfe

Type

2SD2537-V

2SD2537-W

Range

820-1800

1200-2700

Marking

DV

DW

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