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2SA1052-C Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer 2SA1052-C
Bauteilbeschribung  PNP Transistors
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1052-C Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
Features
Low frequency amplifier
Absolute Maximum Ratings Ta = 25
ti
n
U
g
n
it
a
R
l
o
b
m
y
S
r
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t
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m
a
r
a
P
V
e
g
a
tl
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v
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s
a
b
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t
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t
c
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ll
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C
CBO
-30
V
V
e
g
a
tl
o
v
r
e
tt
i
m
e
o
t
r
o
t
c
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C
CEO
-30
V
V
e
g
a
tl
o
v
e
s
a
b
o
t
r
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tt
i
m
E
EBO
-5
V
I
t
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rr
u
c
r
o
t
c
e
ll
o
C
C
-100
mA
I
t
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tt
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E
E
100
mA
P
n
o
it
a
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i
s
s
i
d
r
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w
o
p
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C
C
150
mW
0
5
1
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S
stg
-55 to +150
Electrical Characteristics Ta = 25
hFE Classification
PNP Transistors
2SA1052
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-30
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, RBE=∞
-30
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= -20 V , IE=0
-0.1
Emitter cut-off current
IEBO
VEB= -4V , IC=0
-0.1
Collector-emitter saturation voltage
VCE(sat) IC=-10 mA, IB=-1mA
-0.2
Base-emitter saturation voltage
VBE(sat) IC=-10 mA, IB=-1mA
-1.2
Base-emitter voltage
VBE
VCE= -12 V , IC=-2mA
-0.75
DC current gain
hFE
VCE= -12V, IC= -2mA
100
500
V
u A
V
0.4 +0.1
-0.1
2.9 +0.2
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.2
1
2
3
Unit: mm
SOT-23-3
1. Base
2. Emitter
3. Collector
0.15 +0.02
-0.02
Type
2SA1052-B
2SA1052-C
2SA1052-D
Range
100-200
160-320
250-500
Marking
MB
MC
MD


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