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2SA1121-D Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer 2SA1121-D
Bauteilbeschribung  PNP Transistors
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1121-D Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SA1121-D Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SA1121-D Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
Features
Absolute Maximum Ratings Ta = 25
ti
n
U
g
n
it
a
R
l
o
b
m
y
S
r
e
t
e
m
a
r
a
P
V
e
g
a
tl
o
v
e
s
a
b
o
t
r
o
t
c
e
ll
o
C
CBO
-35
V
V
e
g
a
tl
o
v
r
e
tt
i
m
e
o
t
r
o
t
c
e
ll
o
C
CEO
-35
V
V
e
g
a
tl
o
v
e
s
a
b
o
t
r
e
tt
i
m
E
EBO
-4
V
I
t
n
e
rr
u
c
r
o
t
c
e
ll
o
C
C
-500
mA
P
n
o
it
a
p
i
s
s
i
d
r
e
w
o
p
r
o
t
c
e
ll
o
C
C
150
mW
0
5
1
j
T
e
r
u
t
a
r
e
p
m
e
t
n
o
it
c
n
u
J
T
e
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u
t
a
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p
m
e
t
e
g
a
r
o
t
S
stg
-55 to +150
Electrical Characteristics Ta = 25
hFE(1) Classification
PNP Transistors
2SA1121
Low frequency amplifier
Complementary pair with 2SC2618
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 uA, IE=0
-35
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, IB=0
-35
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-4
Collector-base cut-off current
ICBO
VCB= -30 V , IE=0
-0.1
Emitter cut-off current
IEBO
VEB= -4V , IC=0
-0.1
Collector-emitter saturation voltage
VCE(sat) IC=-150 mA, IB=-15mA
-0.2
-0.6
Base-emitter saturation voltage
VBE(sat) IC=-150 mA, IB=-15mA
-1.2
Base-emitter voltage
VBE
IC=-10 mA, VCE=-3V
-0.64
IC=-10 mA, VCE=-3V
100
320
IC=-500 mA, VCE=-3V
10
V
uA
V
DC current transfer ratio
hFE
0.4 +0.1
-0.1
2.9 +0.2
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.2
1
2
3
Unit: mm
SOT-23-3
1. Base
2. Emitter
3. Collector
0.15 +0.02
-0.02
Type
2SA1121-C
2SA1121-D
Range
100-200
160-320
Marking
SC
SD


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