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2SD1000-L-HF Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer 2SD1000-L-HF
Bauteilbeschribung  NPN Transistors
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD1000-L-HF Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
Transistors
Features
Low collector saturation voltage.
VCE(sat) < 0.4V (IC=500mA,IB=50mA)
Complimentary to 2SB799-HF
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
60
Collector - Emitter Voltage
VCEO
50
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
IC
700
mA
Collector Current - Pulse
(Note.1)
ICP
1
A
Collector Power Dissipation
PC
2
W
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
V
Note.1: Pw ≤ 100ms,duty cycle ≤ 50℅
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
60
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA, RBE= ∞
50
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
5
Collector-base cut-off current
ICBO
VCB= 60 V , IE= 0
0.1
Emitter cut-off current
IEBO
VEB= 5V , IC=0
0.1
Collector-emitter saturation voltage
(Note.1)
VCE(sat) IC=500 mA, IB=50mA
0.12
0.4
Base - emitter saturation voltage
(Note.1)
VBE(sat) IC=500 mA, IB=50mA
0.9
1.2
Base - emitter voltage
(Note.1)
VBE
VCE= 6V, IC= 10mA
600
635
700
mV
VCE= 1V, IC= 100mA
90
200
400
VCE= 1V, IC= 500mA
50
150
Collector output capacitance
Cob
VCB= 6V, IE=0,f=1MHz
13
pF
Transition frequency
fT
VCE= 6V, IE= -10mA
110
MHz
DC current gain
(Note.1)
hFE
V
uA
V
Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
Classification of hfe(1)
Type
2SD1000- M-HF 2SD1000- L-HF 2SD1000- K-HF
Range
90-180
135-270
200-400
Marking
LM F
LL F
LK F
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
NPN Transistors
2SD1000-HF


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