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2SD1295-Q Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer 2SD1295-Q
Bauteilbeschribung  NPN Transistors
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD1295-Q Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
Transistors
NPN Transistors
2SD1295
Features
High collector to emitter VCEO
Large collector power dissipation PC
Complementary to 2SB968
2.3
0.60+ 0.1
- 0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4 .60 +0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.127
max
TO-252
Unit: mm
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
50
Collector - Emitter Voltage
VCEO
40
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
IC
1.5
Collector Current - Pulse
ICP
3
Collector Power Dissipation
PC
20
W
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
V
A
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= 1 mA, IE= 0
50
Collector- emitter breakdown voltage
VCEO
Ic= 2 mA, IB= 0
40
Emitter - base breakdown voltage
VEBO
IE= 1 mA, IC= 0
5
Collector-base cut-off current
ICBO
VCB= 50 V , IE= 0
1
Collector- emitter cut-off current
ICEO
VCE= 40 V , IE= 0
100
Emitter cut-off current
IEBO
VEB= 5V , IC=0
10
Collector-emitter saturation voltage
VCE(sat) IC=1.5 A, IB=150mA
1
Base - emitter saturation voltage
VBE(sat) IC=2 A, IB=200mA
1.5
DC current gain
hFE
VCE= 5V, IC= 1 A
50
220
Collector output capacitance
Cob
VCB= 20V, IE= 0,f=1MHz
45
pF
Transition frequency
fT
VCE= 5V, IC= 500mA,f=200MHz
150
MHz
V
V
uA
Classification of hfe
Type
2SD1295-P
2SD1295-Q
2SD1295-R
Range
50-100
80-160
120-220


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